DocumentCode :
2652981
Title :
Investigation of deep-level states in bulk and low-temperature MBE semi-insulating GaAs by admittance transient spectroscopy
Author :
Dubecky, F. ; Darmo, J. ; Darviras, M. ; Förster, A. ; Kordos, P. ; Luth, H.
Author_Institution :
Comenium University, Bratislava
fYear :
1992
fDate :
21-24 Apr 1992
Firstpage :
265
Lastpage :
272
Keywords :
Admittance; Capacitance; Conducting materials; Dielectric materials; Frequency; Gallium arsenide; Optical materials; Semiconductor materials; Spectroscopy; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on
Print_ISBN :
0-7503-0242-9
Type :
conf
DOI :
10.1109/SIM.1992.752710
Filename :
752710
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2652981
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