DocumentCode :
2653028
Title :
Photoreftectance characterization of LEC-SI GaAs and Fe-InP
Author :
Bhimnathwala, H.G. ; Borrego, J.M.
Author_Institution :
Rensselaer Polytechnic Institute, New York
fYear :
1992
fDate :
21-24 Apr 1992
Firstpage :
285
Lastpage :
290
Keywords :
Chemicals; Current measurement; Gallium arsenide; Laser beams; Laser excitation; Optical modulation; Photonic band gap; Pump lasers; Surface treatment; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on
Print_ISBN :
0-7503-0242-9
Type :
conf
DOI :
10.1109/SIM.1992.752713
Filename :
752713
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2653028
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