Title :
An X-Band GsAs FET Monolithic Power Amplifier
Author :
Pucel, R.A. ; Ng, P. ; Vorhaus, J.
fDate :
April 30 1979-May 2 1979
Abstract :
Experimental results obtained with a monolithic, one-stage X-band power FET amplifier will be presented along with the CAD design techniques used. Some general considerations relating to the feasibility of GaAs as a monolithic circuit substrate will be given.
Keywords :
Frequency; Gallium arsenide; MESFET integrated circuits; Microstrip; Microwave FET integrated circuits; Microwave FETs; Microwave devices; Microwave integrated circuits; Power amplifiers; Substrates;
Conference_Titel :
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/MWSYM.1979.1124077
