Techniques for Improving the Stability and Amplifier Performance of X-Band GaAs Power FETs

Via hole source connections together with on-carrier matching significantly improve X-band power FET performance. Via hole connections eliminate spurious oscillations by reducing common-lead source inductance. On-carrier matching networks improve the power and gain of X-band FET amplifiers by partially matching the very low input and output impedance of large periphery devices with impedance transformation networks located as close to the transistor as possible.