Title :
Highly Reliable GaAs MESFETs with a Static Mean NF/sub min/ of 0.89 db and a Standard Deviation of 0.07 db at 4 GHz
Author :
Suzuki, T. ; Nara, A. ; Nakatani, M. ; Ishii, T. ; Mitsui, S. ; Shirahata, K.
fDate :
April 30 1979-May 2 1979
Abstract :
Optimization of structure and configuration of GaAs MESFETs for high performance and high reliability was investigated. GaAs MESFETs with the NF/sub min/ of 0.89 dB and the standard deviation of 0.07 dB at 4 GHz, the CW and pulse input power capability more than 0.4 W and 2 W, respectively and the failure rate less than 180 Fit have become practical.
Keywords :
Active noise reduction; Electric variables; Frequency; Gallium arsenide; Laboratories; MESFETs; Noise measurement; Reproducibility of results; Semiconductor device reliability; Testing;
Conference_Titel :
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/MWSYM.1979.1124079
