DocumentCode :
2653056
Title :
NMR characterization of stoichiometry-related point defects in SI-GaAs
Author :
Suemitsu, M. ; Terada, K. ; Miyamoto, N.
Author_Institution :
Tohoku University, Japan
fYear :
1992
fDate :
21-24 Apr 1992
Firstpage :
299
Lastpage :
306
Keywords :
Annealing; Crystalline materials; Crystals; Electromagnetic wave absorption; Gallium arsenide; Infrared detectors; Infrared spectra; Magnetic field measurement; Nuclear magnetic resonance; Pulse measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on
Print_ISBN :
0-7503-0242-9
Type :
conf
DOI :
10.1109/SIM.1992.752715
Filename :
752715
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2653056
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