• DocumentCode
    2653084
  • Title

    High Frequency Performance of Implanted Si-MOSFETs

  • Author

    Tsironis, C. ; Niggebrugge, U.

  • fYear
    1979
  • fDate
    April 30 1979-May 2 1979
  • Firstpage
    396
  • Lastpage
    398
  • Abstract
    Silicon MOSFETs with a 0.8/um long channel, made by conventional technology and optimized for microwave applications, have noise figure of 3.5 dB at 4 GHz and f/sub max/ of 10 to 12 GHz. The noise and RF small signal performance are very slightly affected by channel ion implantation, used to shift the threshold voltage to positive values. The RF equivalent circuit analysis indicates negligible parasitic lead resistances but high feedback capacitance.
  • Keywords
    Circuit noise; Equivalent circuits; Ion implantation; MOSFETs; Microwave technology; Noise figure; RF signals; Radio frequency; Silicon; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1979 IEEE MTT-S International
  • Conference_Location
    Orlando, FL, USA
  • Type

    conf

  • DOI
    10.1109/MWSYM.1979.1124080
  • Filename
    1124080
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2653084