DocumentCode
2653128
Title
Quasi-Static Approach to Simulating Nonlinear GaAs FET Behavior
Author
Rauscher, C. ; Willing, H.A.
fYear
1979
fDate
April 30 1979-May 2 1979
Firstpage
402
Lastpage
404
Abstract
A technique is described for accurately predicting nonlinear performance of microwave GaAs field-effect transistors in arbitrary circuit embedding using a quasi-static device model. Excellent agreement with experimental results at X-band is demonstrated.
Keywords
Circuit simulation; Circuit topology; Frequency; Gain measurement; Gallium arsenide; Microwave FETs; Microwave devices; Performance gain; Power measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location
Orlando, FL, USA
Type
conf
DOI
10.1109/MWSYM.1979.1124082
Filename
1124082
Link To Document