Title :
New ZVS analysis of PWM converters applied to super-junction, GaN and SiC power FETs
Author :
Miftakhutdinov, Rais
Author_Institution :
High Voltage Power Solutions, Texas Instrum. Inc., Cary, NC, USA
Abstract :
High efficiency and power density conversion requires minimizing switching losses associated with power FET Coss recharging. Experiments show significant differences between small-signal based Coss data provided in datasheets versus large signal switching behavior of FETs for new Si super-junction, SiC and GaN technologies. Thus, better accuracy Coss models for switching losses are suggested and new analytical ZVS conditions established for popular PWM converter topologies allowing meet efficiency goals at wide operating range.
Keywords :
III-V semiconductors; PWM power convertors; gallium compounds; losses; power field effect transistors; silicon compounds; wide band gap semiconductors; zero voltage switching; GaN; PWM converter topology; SiC; ZVS; power FET Coss recharging; signal switching behavior; superjunction FET; switching losses; Capacitance; Field effect transistors; Silicon; Silicon carbide; Switches; Zero voltage switching; Gallium Nitride (GaN); MOSFET; Silicon Carbide (SiC); Soft Switching; Super Junction Devices; ZVS Converters;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE
Conference_Location :
Charlotte, NC
DOI :
10.1109/APEC.2015.7104372
