DocumentCode :
2653159
Title :
Characterization of deep level traps in ultrasubmicron modulation-doped field-effect transistors on InP substrate using improved photo-induced current spectroscopy (PICS)
Author :
Sung, Roberto ; Das, Mukunda B.
Author_Institution :
The Pennsylvania State University
fYear :
1992
fDate :
21-24 Apr 1992
Firstpage :
335
Lastpage :
340
Keywords :
Charge carrier processes; Electron traps; Epitaxial layers; FETs; HEMTs; Indium phosphide; MODFETs; Optical buffering; Spectroscopy; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on
Print_ISBN :
0-7503-0242-9
Type :
conf
DOI :
10.1109/SIM.1992.752721
Filename :
752721
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2653159
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