DocumentCode
2653164
Title
Extension of Existing Models to MESFET´s with Arbitrary Doping Density Profiles
Author
de Santis, P.
fYear
1979
fDate
April 30 1979-May 2 1979
Firstpage
408
Lastpage
410
Abstract
This work extends uniform MESFET\´s analyses to arbitrary doping density profiles. Analytical expressions and numerical computations are provided for equivalent circuit elements of MESFET\´s with gaussian, exponential, inverse cubic, and "power series" profiles. A good agreement with experiment is found for ion implanted devices.
Keywords
Capacitance; Circuit analysis computing; Circuit noise; Doping profiles; Electron mobility; Equivalent circuits; MESFET circuits; Semiconductor device doping; Semiconductor device noise; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location
Orlando, FL, USA
Type
conf
DOI
10.1109/MWSYM.1979.1124084
Filename
1124084
Link To Document