Title :
Extension of Existing Models to MESFET´s with Arbitrary Doping Density Profiles
fDate :
April 30 1979-May 2 1979
Abstract :
This work extends uniform MESFET\´s analyses to arbitrary doping density profiles. Analytical expressions and numerical computations are provided for equivalent circuit elements of MESFET\´s with gaussian, exponential, inverse cubic, and "power series" profiles. A good agreement with experiment is found for ion implanted devices.
Keywords :
Capacitance; Circuit analysis computing; Circuit noise; Doping profiles; Electron mobility; Equivalent circuits; MESFET circuits; Semiconductor device doping; Semiconductor device noise; Semiconductor process modeling;
Conference_Titel :
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/MWSYM.1979.1124084
