Title :
Fabrication Of Monolithic Two-dimensional Surface-emitting Strained-layer InGaAs/AiGaAs And AllnGaAs/AiGaAs Diode-laser Arrays With Over 50% Differential Quantum Efficiencies
Author :
Goodhue, W.D. ; Donnelly, J.P. ; Wang, C.A. ; Lincoln, G.A. ; Bailey, R.J. ; Johnson, G.D. ; Rauschenbach, K.
Author_Institution :
Massachusetts Institute of Technology
fDate :
29 Jul-2 Aug 1991
Keywords :
Encapsulation; Fabrication; Gallium arsenide; Indium gallium arsenide; Metallization; Mirrors; Optical arrays; Publishing; Semiconductor laser arrays; Surface emitting lasers;
Conference_Titel :
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN :
0-87942-618-7
DOI :
10.1109/LEOSST.1991.639016
