Title :
Microwave Nanosecond Pulse Burnout Properties of GsAs MESFETs
Author :
Whalen, J.J. ; Thorn, M. ; Calcatera, M.C.
fDate :
April 30 1979-May 2 1979
Abstract :
Microwave nsec pulse burnout data have been measured at 9 GHz for three 1 micron gate MESFETs. Values of incident pulse power and absorbed energy required to cause burnout are presented and discussed. Also discussed are the dominant failure modes for the overstressed MESFETs.
Keywords :
Bonding; Force measurement; Gallium arsenide; Gold; MESFETs; Microwave devices; Noise figure; Power system protection; Pulse measurements; Radar antennas;
Conference_Titel :
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/MWSYM.1979.1124096
