DocumentCode
2653416
Title
An Electron-Bombarded Semiconductor (EBS) Modulator and Switch Driver
Author
Perkins, T.O., III
fYear
1979
fDate
April 30 1979-May 2 1979
Firstpage
446
Lastpage
448
Abstract
High power PIN diodes hot switching control devices require large amplitude, fast risetime, forward bias current and reverse bias voltage pulse commands. Performance exceeding that available from present state-of-the-art binary state transistor drivers is highly desirable. This paper describes use of an Electron-Bombarded Semiconductor permitting faster and more reliable microwave high power switching.
Keywords
Breakdown voltage; Capacitance; Driver circuits; Electromagnetic heating; Electron beams; Microwave devices; Power semiconductor switches; Semiconductor diodes; Thermal stresses; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location
Orlando, FL, USA
Type
conf
DOI
10.1109/MWSYM.1979.1124097
Filename
1124097
Link To Document