Title :
Improved thermal stability of power SiGe heterojunction bipolar transistor with novel emitter structure
Author :
Hu, Ning ; Zhang, Wan Rong ; Chen, Liang ; Huang, Lu ; Huang, Vi Wen
Author_Institution :
Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol.(BJUT), Beijing, China
Abstract :
A novel segmented emitter structure with nonuniform finger length and spacing has been presented to alleviate adverse thermal effects in multi-finger SiGe HBT power device. Considering the various thermal resistances of different components for the segmented multi-finger HBT, an appropriate thermal model is developed. Using this model, the thermal simulation for a ten-finger power SiGe HBT with segmented emitter structure is performed and the three-dimensional temperature distribution on emitter fingers is obtained. Compared with traditional emitter structure, the maximum junction temperature reduce significantly from 416.3 K to 405 K, the thermal resistance reduce from 154.67 K/W to 140 K/W, thus the thermal stability of improved structure is enhanced apparently.
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; power semiconductor devices; temperature distribution; thermal stability; 3D temperature distribution; HBT power device; SiGe; emitter structure; power heterojunction bipolar transistor; temperature 405 K; temperature 416.3 K; thermal stability; Contracts; Control engineering; Educational institutions; Fingers; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Temperature; Thermal resistance; Thermal stability; Heterojunction bipolar transistors; segmented emitter; silicon-germanium; thermal stability;
Conference_Titel :
ASIC, 2009. ASICON '09. IEEE 8th International Conference on
Conference_Location :
Changsha, Hunan
Print_ISBN :
978-1-4244-3868-6
Electronic_ISBN :
978-1-4244-3870-9
DOI :
10.1109/ASICON.2009.5351519
