Title :
A pure logic CMOS based low power non-volatile random access memory for RFID application
Author :
Yan, Yam ; Wu, Dong ; Liu, Huijuan ; Pan, Liyang ; Xu, Jun
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
A 1.8V, 0.18 ¿m pure logic CMOS based low power non-volatile random access memory for RFID application is developed in this paper. Low power consumption is achieved based on a novel two-dimension architecture and a series of power optimization methods. Simulation result shows that the power consumption for read and write operations is less than 160 ¿W and 560 ¿W respectively. The merits make it suitable for low power RFID .
Keywords :
CMOS memory circuits; low-power electronics; radiofrequency identification; random-access storage; RFID application; logic CMOS; low power nonvolatile random access memory; power 160 muW; power 560 muW; power optimization method; size 0.18 mum; voltage 1.8 V; CMOS logic circuits; Charge pumps; Decoding; Energy consumption; Nonvolatile memory; Radiofrequency identification; Random access memory; Switches; Switching circuits; Voltage; CMOS; Non-volatile random access memory; low power; two-dimension array architecture;
Conference_Titel :
ASIC, 2009. ASICON '09. IEEE 8th International Conference on
Conference_Location :
Changsha, Hunan
Print_ISBN :
978-1-4244-3868-6
Electronic_ISBN :
978-1-4244-3870-9
DOI :
10.1109/ASICON.2009.5351520
