Non-destructive characterization of SIMOX substrates

Author

Rod, B. ; Reams, R.

Author_Institution

Adelphi Lab. Center, MD, USA

fYear

1989

fDate

3-5 Oct 1989

Firstpage

99

Lastpage

100

Abstract

Summary form only given. A study performed to qualify photothermal modulated reflectance for use as a screening process to select SIMOX wafers for device fabrication is discussed. The basic approach is to use commercially available equipment to perform photothermal modulated reflectance measurements on a number of SIMOX wafers. These measurements are then correlated with defect counting and secondary ion mass spectroscopy (SIMS) analysis to show that the nondestructive reflectance measurements could be used as a figure of merit for the overall material quality of SIMOX wafer

Keywords

elemental semiconductors; inspection; ion implantation; modulation spectroscopy; photothermal spectroscopy; reflectivity; semiconductor-insulator boundaries; silicon; SIMOX substrates; SOI; Si; Si:O; defect counting; device fabrication; elemental semiconductor; figure of merit; nondestructive characterisation; overall material quality; photothermal modulated reflectance; screening process; secondary ion mass spectroscopy; Laboratories; Laser beams; Laser excitation; Optical materials; Optical modulation; Optical refraction; Probes; Pump lasers; Reflectivity; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1989., 1989 IEEE

Conference_Location

Stateline, NV

Type

conf

DOI

10.1109/SOI.1989.69785

Filename

69785