Title :
12 GHz 1W GaAs FET Amplifier for SHF TV Signal Transmission
Author :
Aihara, S. ; Fujiki, Y. ; Fukuda, S. ; Akasaka, S. ; Haga, I.
fDate :
April 30 1979-May 2 1979
Abstract :
An all-solid-state RF amplifier using GaAs Schottky barrier gate FETs for use as SHF-band TV broadcast power amplifiers has been recently developed. The amplifier is composed of five unit amplifiers and designed to operate with 40 dB gain, and +24 dBm output.
Keywords :
Circuits; Gain; Gallium arsenide; Intermodulation distortion; Microwave FETs; Power amplifiers; RF signals; Radiofrequency amplifiers; Scattering parameters; TV broadcasting;
Conference_Titel :
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/MWSYM.1979.1124111
