Title :
A 12 GHz 1 W GaAs MESFET Amplifier
Author :
Kadowaki, Yuki ; Nakatani, Masahiro ; Ishii, Takuro ; Shirahata, Koichi
fDate :
April 30 1979-May 2 1979
Abstract :
A simple and convenient method on the design of GaAs MESFET power amplifiers are presented. Based on this method are constructed five-stage MIC amplifiers, which deliver 1 W power outputs at the 12 GHz band. Further brush-up of the power performance is investigated using newly developed flip-chip power MESFETs, resulting in 2 W power output.
Keywords :
Design methodology; FETs; Gallium arsenide; High power amplifiers; MESFET circuits; Performance gain; Power amplifiers; Semiconductor optical amplifiers; Signal analysis; Signal design;
Conference_Titel :
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/MWSYM.1979.1124112
