DocumentCode
2653787
Title
A 4w, 56dB Gain, Microstrip Amplifier at 15 GHz Utilizing GaAs FETs and IMPATT Diodes
Author
Sokolov, V. ; Namordi, M.R. ; Doerbeck, F.H.
fYear
1979
fDate
April 30 1979-May 2 1979
Firstpage
489
Lastpage
491
Abstract
Performance results and design considerations are presented for an all solid-state power amplifier suitable for spacecraft transmitter applications. Design emphasis is placed on high power, high efficiency and high reliability operation, as well as on compact amplifier construction.
Keywords
Diodes; FETs; Gallium arsenide; High power amplifiers; Microstrip; Operational amplifiers; Power amplifiers; Solid state circuits; Space vehicles; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location
Orlando, FL, USA
Type
conf
DOI
10.1109/MWSYM.1979.1124113
Filename
1124113
Link To Document