• DocumentCode
    2653806
  • Title

    An X-Band Dual-Gate FET Up-Converter

  • Author

    Tsai, W.C. ; Paik, S.F. ; Hewitt, B.S. ; Gregory, N. ; Tanzi, P.

  • fYear
    1979
  • fDate
    April 30 1979-May 2 1979
  • Firstpage
    495
  • Lastpage
    497
  • Abstract
    An up-converter using dual-gate GaAs FET was operated at X-band output frequencies with an IF input at 700 MHz. The FET up-converter offers advantages of conversion gain (up to 15 dB), low noise figure (3.2 dB) and built-in port-to-port isolation. The power output saturated at +9 dBm, and the third-order IM product at the 1 dB compression point was -22 dBC.
  • Keywords
    Circuits; Diodes; Frequency conversion; Gain; Gallium arsenide; Microwave FETs; Noise figure; Noise measurement; Radio frequency; Scattering parameters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1979 IEEE MTT-S International
  • Conference_Location
    Orlando, FL, USA
  • Type

    conf

  • DOI
    10.1109/MWSYM.1979.1124115
  • Filename
    1124115
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2653806