Title :
Frequency Multiplication with High-Power Microwave Field-Effect Transistors
Author :
Gupta, M.S. ; Laton, R.W. ; Lee, T.T.
fDate :
April 30 1979-May 2 1979
Abstract :
The experimentally measured characteristics of a 4-to-8 GHz FET frequency doubler are described. A nonlinear circuit model for microwave FETs is proposed and is shown useful for predicting and optimizing the doubler performance, and for calculating the design parameters.
Keywords :
Electric variables measurement; Frequency conversion; Frequency measurement; Laboratories; Linear circuits; Microwave FETs; Microwave devices; Power system harmonics; Tuning; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/MWSYM.1979.1124116
