Title :
MSI High Speed Low Power GaAs ICs Using Schottky Diode FET Logic
Author :
Long, S.I. ; Welch, B.M. ; Eden, R.C. ; Lee, F.S. ; Zucca, R.
fDate :
April 30 1979-May 2 1979
Abstract :
A new approach to the design and fabrication of planar high speed GaAs integrated circuits is described. Experimental digital circuits of MSI level complexities have been fabricated showing high gate density, low dynamic switching energies and very high switching speeds.
Keywords :
Circuit testing; FETs; Fabrication; Gallium arsenide; Implants; Logic gates; Logic testing; Propagation delay; Schottky diodes; Switching circuits;
Conference_Titel :
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/MWSYM.1979.1124120
