The optimal design of GaN-based Dual Active Bridge for bi-directional Plug-IN Hybrid Electric Vehicle (PHEV) charger

Author

Lingxiao Xue ; Mingkai Mu ; Boroyevich, Dushan ; Mattavelli, Paolo

Author_Institution

Center for Power Electron. Syst., Virginia Tech, Blacksburg, VA, USA

fYear

2015

fDate

15-19 March 2015

Firstpage

602

Lastpage

608

Abstract

A high frequency, high efficiency bi-directional battery charger for Plug-in Hybrid Electric Vehicle (PHEV) is built with high voltage normally-off GaN-on-Si HFETs. This paper characterized the multi-chip-model both statically and dynamically. The optimal design of the isolated 500 kHz Dual Active Bridge DC/DC stage is detailed, taking account the wide battery voltage range and sinusoidal charging, to eliminate large DC link capacitor. Experimentally result shows a 500 kHz DAB converter with discrete inductor and transformer can achieved 97.2% efficiency at 1kW and 96.4% efficiency at 2.4 kW. By integrating the inductor into the transformer, 98.2% efficiency is achieved at 1 kW.

Keywords

DC-DC power convertors; III-V semiconductors; battery chargers; elemental semiconductors; gallium compounds; high electron mobility transistors; hybrid electric vehicles; silicon; wide band gap semiconductors; DAB converter; GaN-Si; PHEV; bi-directional battery charger; bi-directional plug-in hybrid electric vehicle charger; discrete inductor; dual active bridge DC/DC stage; frequency 500 kHz; high voltage normally-off GaN-on-Si HFET; large DC link capacitor; multichip model; power 1 kW; sinusoidal charging; transformer; Batteries; Bridge circuits; Gallium nitride; Inductance; Inductors; Switches; Zero voltage switching; Dual active bridge; GaN; battery charger;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE

Conference_Location

Charlotte, NC

Type

conf

DOI

10.1109/APEC.2015.7104411

Filename

7104411