DocumentCode :
2654048
Title :
High current power modules for electric vehicles
Author :
Berringer, Ken ; Romero, Guillermo L.
Author_Institution :
Semicond. Products Sector, Motorola Inc., Phoenix, AZ, USA
fYear :
1994
fDate :
20-21 Oct 1994
Firstpage :
59
Lastpage :
65
Abstract :
This paper discusses developments in power module technology suited for electric vehicle traction motor drive applications. These modules must have high current capability, low on-voltage, low switching losses, and be able to withstand a large number of thermal cycles. Advances in silicon IGBT technology has significantly improved their on-voltage and switching characteristics. The typical on-voltage for a state of the art 100 Amp IGBT die is under 2.0 volts. This reduction in on-voltage allows less silicon to be used for a given current and improves efficiency. A low inductance power module has been developed, using a specially designed circuit layout and lead structure, to reduce voltage overshoot during high speed switching. In terms of packaging, metal matrix composite (MMC) technology has been used to greatly improve reliability and design flexibility, without sacrificing thermal performance. In particular, silicon carbide/aluminum (SiC/Al), a moldable MMC whose thermal expansion coefficient can be tailored has been used to design integrated packages that have excellent reliability as compared to copper based power modules
Keywords :
aluminium compounds; automotive electronics; electric propulsion; electric vehicles; insulated gate bipolar transistors; losses; power semiconductor switches; semiconductor device packaging; semiconductor materials; silicon compounds; switching circuits; traction motor drives; SiC-Al; SiC/Al; circuit layout; efficiency improvement; electric vehicle traction motor drive; electric vehicles; high current capability; high current power modules; integrated packages; lead structure; low inductance power module; low on-voltage; low switching losses; metal matrix composite technology; silicon IGBT technology; silicon carbide/aluminum; thermal expansion coefficient; voltage overshoot reduction; Circuits; Drives; Electric vehicles; Inductance; Insulated gate bipolar transistors; Multichip modules; Packaging; Silicon carbide; Switching loss; Traction motors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics in Transportation, 1994. [Proceedings]
Conference_Location :
Dearborn, MI
Print_ISBN :
0-7803-1839-0
Type :
conf
DOI :
10.1109/PET.1994.572357
Filename :
572357
Link To Document :
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