DocumentCode :
2654532
Title :
Integrated DC link capacitor/bus structures to minimize external ESL contribution to voltage overshoot
Author :
Brubaker, M.A. ; Kirbie, H.C. ; Hosking, T.A.
Author_Institution :
SBE, Inc., Barre, VT, USA
fYear :
2012
fDate :
18-20 June 2012
Firstpage :
1
Lastpage :
6
Abstract :
Voltage overshoot is defined by stray series inductance and turn-off time, which must be managed to avoid failure of IGBT´s in inverter applications. The total equivalent series inductance (ESL) is dictated by internal switch branch inductance with a significant contribution in the current path to the DC link capacitor. Using traditional topologies, external ESL dominates and by-pass capacitors (“snubbers”) are used to mitigate overshoot. Integrated capacitor/bus designs provide an external ESL comparable to internal values for commercial IGBT´s. The minimized ESL regime allows reduced switch turn-off time with slightly increased losses to manage overshoot without the cost, space, weight, dissipation, and reliability associated with by-pass capacitors.
Keywords :
failure analysis; insulated gate bipolar transistors; invertors; power capacitors; reliability; snubbers; IGBT; bus structure design; by-pass capacitors; external ESL; failure avoidance; integrated DC link capacitor; internal switch branch inductance; inverter; reliability; snubbers; stray series inductance; switch turn-off time; total equivalent series inductance; voltage overshoot; Capacitors; Inductance; Insulated gate bipolar transistors; Inverters; Logic gates; Snubbers; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Transportation Electrification Conference and Expo (ITEC), 2012 IEEE
Conference_Location :
Dearborn, MI
Print_ISBN :
978-1-4673-1407-7
Electronic_ISBN :
978-1-4673-1406-0
Type :
conf
DOI :
10.1109/ITEC.2012.6243453
Filename :
6243453
Link To Document :
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