DocumentCode :
2654571
Title :
Development Of High Resolution Reactive Ion Etching Of II-VI Semiconductors Using CH4/H2
Author :
Foad, M.A. ; Dunscomb, C. ; Williams, R.H. ; Wilkinson, C.D.W.
Author_Institution :
University of Glasgow, Glasgow G12 8QQ U.K.
fYear :
1991
fDate :
29 Jul-2 Aug 1991
Firstpage :
68
Lastpage :
69
Keywords :
Electron emission; Etching; Hydrogen; Kinetic energy; Monitoring; Nanostructures; Signal resolution; Tellurium; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN :
0-87942-618-7
Type :
conf
DOI :
10.1109/LEOSST.1991.639023
Filename :
639023
Link To Document :
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