DocumentCode
2654571
Title
Development Of High Resolution Reactive Ion Etching Of II-VI Semiconductors Using CH4/H2
Author
Foad, M.A. ; Dunscomb, C. ; Williams, R.H. ; Wilkinson, C.D.W.
Author_Institution
University of Glasgow, Glasgow G12 8QQ U.K.
fYear
1991
fDate
29 Jul-2 Aug 1991
Firstpage
68
Lastpage
69
Keywords
Electron emission; Etching; Hydrogen; Kinetic energy; Monitoring; Nanostructures; Signal resolution; Tellurium; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN
0-87942-618-7
Type
conf
DOI
10.1109/LEOSST.1991.639023
Filename
639023
Link To Document