Title :
10 GHz-10 W Internally Matched Flip-Chip GaAs Power FETS
Author :
Mitsui, Yoshifuru ; Kobiki, M. ; Wataze, M. ; Segawa, K. ; Otsubo, M. ; Nakatani, M. ; Ishii, T.
Abstract :
The flip-chip GaAs power f.e.t. delivering 10 W power output with 3 dB gain has been realized at 10 GHz by using a newly developed internal matching technique, in which the f.e.t. chips are directly connected to the lumped dielectric capacitors prepared for the matching networks.
Conference_Titel :
Microwave symposium Digest, 1980 IEEE MTT-S International
Conference_Location :
Washington, DC, USA
DOI :
10.1109/MWSYM.1980.1124158
