Title :
A 6GHz-25W GaAs MESFET with an Experimentally Optimized Pattern
Author :
Higashisaka, A. ; Honjo, K. ; Takayama, Y. ; Hasegawa, F.
Abstract :
A high power GaAs MESFET with a high packing density has been developed by optimizing the gate finger width. The developed power MESFET is the crossover structure and has a total gate width of 15 mm in a 2.2 mm wide chip. The output powers of 25 W at 6 GHz and 20 W at 8 GHz were obtained with 3 dB associated gain from the internally matched four chip devices.
Conference_Titel :
Microwave symposium Digest, 1980 IEEE MTT-S International
Conference_Location :
Washington, DC, USA
DOI :
10.1109/MWSYM.1980.1124159
