Modeling and designing of RF MEMS switch using ANSYS

This paper presents the design optimization and simulation of low-voltage series and capacitive radio frequency (RF) Micro-electromechanical (MEMS) switches using ANSYS Multiphysics. First, a series switch is simulated using shape memory alloy (SMA) which shows that the use of SMA beam to actuate switching, allows the excitation voltage to be relatively much lower (5 V) compared to that needed for electrostatic actuation (30 V). Secondly, in the capacitive switch structure both contact plates of the switch are designed as displaceable membranes with similar dimensions and conditions, differing on only membrane materials. The obtained results (5 V) indicate about 30% reductions in actuation voltage from the conventional single beam (15 V). The stress on the beam due to the actuation voltage is also reduced increasing the switching life time.