Title :
High-Power X-Band Mic Diode Phase Shifters
Author :
Kamihashi, S. ; Kuroda, M. ; Hirai, K.
Abstract :
High-power X-band MIC diode phase shifters have been developed using glass-passivated PIN diodes with a grooved-mesa structure. Although they have outer dimensions of 20mm x 41mm x 10mm, they can handle 300W and 500W peak rf power depending upon the diodes used.
Conference_Titel :
Microwave symposium Digest, 1980 IEEE MTT-S International
Conference_Location :
Washington, DC, USA
DOI :
10.1109/MWSYM.1980.1124190
