DocumentCode
2655261
Title
Self-aligned Si-Zn Diffusion For Impurity-induced Disordering Lasers: Extremely Low Threshold And High Yield
Author
Zou, W.X. ; Merz, J.L. ; Fu, R.J. ; Hong, C.S.
Author_Institution
University of California, Santa Barbara,CA93106, 805-893-8465
fYear
1991
fDate
29 Jul-2 Aug 1991
Firstpage
73
Lastpage
74
Keywords
Electrons; Etching; Laser modes; Lasers and Electro-Optics Society; Leakage current; Optical device fabrication; P-n junctions; Testing; Threshold current; USA Councils;
fLanguage
English
Publisher
ieee
Conference_Titel
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN
0-87942-618-7
Type
conf
DOI
10.1109/LEOSST.1991.639026
Filename
639026
Link To Document