An accurate Matlab/Simulink based SiC MOSFET model for power converter applications

Author

Kampitsis, Georgios ; Antivachis, Michail ; Kokosis, Sotirios ; Papathanassiou, Stavros ; Manias, Stefanos

Author_Institution

Electr. Power Div., Nat. Tech. Univ. of Athens, Zografos, Greece

fYear

2015

fDate

15-19 March 2015

Firstpage

1058

Lastpage

1064

Abstract

In this paper, an analytical model of a silicon carbide power DMOSFET is developed in Matlab/Simulink environment, intended for high performance converter simulations. The proposed Simulink-based model is a highly useful tool that allows users to study system response to transient phenomena and calculate energy losses in a variety of topologies, control strategies and operating conditions. The static characteristics of the model and its performance during hard switching are validated through experimental testing and comparison with similar models in other commercially available simulation platforms. A 1 kW single phase, high frequency inverter is developed using SiC MOSFETs to investigate the accuracy of the proposed model when simulating a complete power converter.

Keywords

electronic engineering computing; power MOSFET; power convertors; power engineering computing; semiconductor device models; silicon compounds; wide band gap semiconductors; MOSFET model; SiC; control strategy; energy loss; operating conditions; power 1 kW; power converter applications; transient phenomena; Analytical models; MOSFET; Mathematical model; Semiconductor device modeling; Silicon carbide; Software packages; Matlab/Simulink; modeling; parameter extraction; power MOSFET; silicon carbide (SiC); simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE

Conference_Location

Charlotte, NC

Type

conf

DOI

10.1109/APEC.2015.7104479

Filename

7104479