DocumentCode
2655400
Title
A Finite Differential Method based IGBT model in PSPICE
Author
Puqi Ning ; Jinlei Meng ; Xuhui Wen
Author_Institution
Lab. of Power Electron. & Power Conversion, Inst. of Electr. Eng., Beijing, China
fYear
2015
fDate
15-19 March 2015
Firstpage
1078
Lastpage
1083
Abstract
Other than conventional Fourier models, the carrier diffusion equation which retains the distributed nature of charge dynamics in power bipolar devices can be solved by a faster Finite Differential Method in PSPICE. The paper presents the physical basis and the practical consideration of a new modeling approach of PiN Diode and IGBT. The model was also verified by simulations and experiments.
Keywords
SPICE; finite difference methods; insulated gate bipolar transistors; p-i-n diodes; power bipolar transistors; power semiconductor diodes; semiconductor device models; Fourier model; IGBT model; PSPICE; PiN diode; carrier diffusion equation; charge dynamics; finite differential method; power bipolar device; Charge carrier density; Insulated gate bipolar transistors; Integrated circuit modeling; Junctions; Mathematical model; SPICE; Semiconductor device modeling; Device model;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE
Conference_Location
Charlotte, NC
Type
conf
DOI
10.1109/APEC.2015.7104482
Filename
7104482
Link To Document