DocumentCode
2655783
Title
A High-Power X-Band Diode Amplifier
Author
Pankow, R.J. ; Mastroianni, R.G.
fYear
1980
fDate
28-30 May 1980
Firstpage
159
Lastpage
161
Abstract
The requirement for high power solid state amplifiers at X-Band has necessitated a close investigation of diode power combiners for use as reflection amplifiers. A brassboard amplifier incorporating 17 diodes in all and using a 10 diode TM/sub 010/ mode resonant cavity combiner has been fabricated in a 4 inch diameter 10 inch long cylindrical configuration. A power level of 74 watts peak at a 0.33 duty ratio and 34 dB gain has been achieved.
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave symposium Digest, 1980 IEEE MTT-S International
Conference_Location
Washington, DC, USA
Type
conf
DOI
10.1109/MWSYM.1980.1124217
Filename
1124217
Link To Document