Title :
Engineering spin-polarization dynamics in InGaAs dot-in-a-well (DWELL) structures
Author :
Tartakovskii, A.I. ; Kolodka, R.S. ; Mowbray, D.J. ; Fox, A.M. ; Skolnick, M.S. ; Liu, H.Y. ; Hopkinson, M.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Sheffield, UK
Abstract :
Period of quantum beats in spin-polarization dynamics in DWELLS is shown to vary systematically with In concentration in the well. Spin-polarization in undoped and modulation-doped DWELLS is found to be very robust at high temperature.
Keywords :
gallium arsenide; indium compounds; semiconductor quantum dots; spin dynamics; spin polarised transport; In concentration; InGaAs; InGaAs dot-in-a-well structures; high temperature characteristics; modulation-doped dot-in-a-well structures; quantum beats period; spin-polarization dynamics; undoped dot-in-a-well structures; Annealing; Capacitive sensors; Elementary particle exchange interactions; Excitons; Frequency selective surfaces; Indium gallium arsenide; Land surface temperature; Optical polarization; Robust stability; Stationary state;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN :
1-55752-796-2
DOI :
10.1109/QELS.2005.1549334
