DocumentCode
2655848
Title
Engineering spin-polarization dynamics in InGaAs dot-in-a-well (DWELL) structures
Author
Tartakovskii, A.I. ; Kolodka, R.S. ; Mowbray, D.J. ; Fox, A.M. ; Skolnick, M.S. ; Liu, H.Y. ; Hopkinson, M.
Author_Institution
Dept. of Phys. & Astron., Univ. of Sheffield, UK
Volume
3
fYear
2005
fDate
22-27 May 2005
Firstpage
1938
Abstract
Period of quantum beats in spin-polarization dynamics in DWELLS is shown to vary systematically with In concentration in the well. Spin-polarization in undoped and modulation-doped DWELLS is found to be very robust at high temperature.
Keywords
gallium arsenide; indium compounds; semiconductor quantum dots; spin dynamics; spin polarised transport; In concentration; InGaAs; InGaAs dot-in-a-well structures; high temperature characteristics; modulation-doped dot-in-a-well structures; quantum beats period; spin-polarization dynamics; undoped dot-in-a-well structures; Annealing; Capacitive sensors; Elementary particle exchange interactions; Excitons; Frequency selective surfaces; Indium gallium arsenide; Land surface temperature; Optical polarization; Robust stability; Stationary state;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN
1-55752-796-2
Type
conf
DOI
10.1109/QELS.2005.1549334
Filename
1549334
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