Title :
Nanoscale Band Gap Engineering And Modulation Doping In GaAs-AiGaAs Quantum Well Structures By Focused Ion Beam
Author :
Petroff, P.M. ; Li, Y.J. ; Xu, Z. ; Sasa, S. ; Deruelle, T. ; Beinstingl, W. ; Miller, M.
Author_Institution :
University of California, Santa Barbara, CA 93106.
fDate :
29 Jul-2 Aug 1991
Keywords :
Density measurement; Electrons; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; Ion beams; Lattices; Photonic band gap; Rapid thermal annealing; Temperature;
Conference_Titel :
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN :
0-87942-618-7
DOI :
10.1109/LEOSST.1991.639029
