• DocumentCode
    2655918
  • Title

    A K-band 1 Watt GaAs FET Amplifier

  • Author

    Jun´ichi Sone ; Takayama, Y.

  • fYear
    1980
  • fDate
    28-30 May 1980
  • Firstpage
    180
  • Lastpage
    182
  • Abstract
    Lumped-element impedance matching techniques were successfully adopted for K-band power GaAs FET amplifiers. The 18 GHz band two-stage amplifier provides 1.05 Watt power output at 1 dB gain compression with 8.1 dB small-signal gain, and 20 GHz band one-stage amplifier has 1.04 Watt power output with 3 dB associated gain.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave symposium Digest, 1980 IEEE MTT-S International
  • Conference_Location
    Washington, DC, USA
  • Type

    conf

  • DOI
    10.1109/MWSYM.1980.1124224
  • Filename
    1124224
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2655918