Title :
CMOS SOI image sensor
Author :
Brouk, I. ; Nemirovsky, Y.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
Design, operation and measurement results of a CMOS camera implemented within a SOI wafer are presented. The peak of photodiode quantum efficiency is obtained for the wavelengths of 400-500 nm. In addition, noise measurements of the 1/f noise in P-MOS and N-MOS transistors for analog applications are reported under wide bias conditions ranging from subthreshold to saturation. Two implementations (in regular and SOI wafers) of 0.35 μm CMOS analog process are compared and it is found that they exhibit similar 1/f noise. The results of this study are useful to the design and modeling of 1/f noise of CMOS analog circuits.
Keywords :
1/f noise; CMOS analogue integrated circuits; CMOS image sensors; MOSFET; electric noise measurement; photodiodes; silicon-on-insulator; 0.35 micron; 1/f noise; 400 to 500 nm; CMOS analog circuits; CMOS camera; CMOS image sensor; N-MOS transistors; P-MOS transistors; SOI wafer; noise measurements; photodiode quantum efficiency; saturation bias; subthreshold bias; CMOS analog integrated circuits; CMOS image sensors; CMOS process; Cameras; Circuit noise; Image sensors; Noise measurement; Photodiodes; Semiconductor device modeling; Wavelength measurement;
Conference_Titel :
Electronics, Circuits and Systems, 2004. ICECS 2004. Proceedings of the 2004 11th IEEE International Conference on
Print_ISBN :
0-7803-8715-5
DOI :
10.1109/ICECS.2004.1399638
