Title :
Non-linear electro thermal model of LDMOS power transistor coupled to 3D thermal model in a circuit simulator
Author :
Guyonnet, Michciel ; Sommet, Raphael ; Quéré, Raymond ; Bouisse, Gérard
Author_Institution :
Motorola Semi-conducteurs, Toulouse, France
Abstract :
In this article, we introduce a new approach for electro thermal modelling of power LDMOS transistor. The electrical description of each intrinsic component is done with 3D bi-cubic splines. The electrical model is coupled to a 3D thermal model stemming from FEA simulation. This full 3D electro thermal model is used with the ADS circuit simulator.
Keywords :
circuit simulation; finite element analysis; power MOSFET; semiconductor device models; splines (mathematics); 3D bi-cubic splines; ADS circuit simulator; FEA simulation; LDMOS power transistor; nonlinear electro thermal model; Finite element methods; Power MOSFETs; Semiconductor device modeling; Spline functions;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
Print_ISBN :
0-7803-7800-8
DOI :
10.1109/BIPOL.2003.1274926
