DocumentCode :
2656099
Title :
Next-generation semiconductors for DC-to-DC converters
Author :
Darwish, Mahmoud
Author_Institution :
Vishay-Siliconix, Santa Clara, CA, USA
fYear :
2003
fDate :
28-30 Sept. 2003
Firstpage :
15
Lastpage :
21
Abstract :
Recent developments in power devices for low voltage DC-to-DC conversion are discussed with emphasis on switch-mode DC-to-DC synchronous buck converter applications. The system functional blocks are presented and the progress in various devices such as power trench MOSFETs, Schottky barrier rectifiers, and power ICs is reviewed. The optimization of a new power trench MOSFET with W-shaped gate structure (WFET) as both a control and synchronous switch is investigated. The factors influencing system partitioning such as required performance, current level, power dissipation, and cost objectives are highlighted.
Keywords :
DC-DC power convertors; Schottky diodes; circuit optimisation; integrated circuit design; power MOSFET; power integrated circuits; power semiconductor devices; rectifiers; switched mode power supplies; DC-to-DC converters; Schottky barrier rectifiers; W-shaped gate structure; WFET; circuit optimization; control switch; current level; power IC; power dissipation; power semiconductor devices; power trench MOSFET; switch-mode synchronous buck converter; synchronous switch; Circuit optimization; DC-DC power conversion; Integrated circuit design; Power MOSFETs; Power integrated circuits; Power semiconductor devices; Rectifiers; Schottky diodes; Switched mode power supplies;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
ISSN :
1088-9299
Print_ISBN :
0-7803-7800-8
Type :
conf
DOI :
10.1109/BIPOL.2003.1274927
Filename :
1274927
Link To Document :
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