DocumentCode :
2656144
Title :
2007 International semiconductor device research symposium
fYear :
2007
fDate :
12-14 Dec. 2007
Abstract :
The following topics were dealt with: novel device structures; space application and extreme environments; oxides and dielectrics; sensors and biosensors; modeling gate related effects; MEMS; silicon on insulator; organic materials and devices; flexible electronics; engineering education; electronic materials; electronic devices; device network applications; advanced device characterization; nanoelectronics; advanced processing technologies; wide band-gap semiconductors; high frequency devices; THz devices; Si-Ge devices; optoelectronics; photonics; SiC power electronic devices; nanoscale device applications; statistical and technology modeling; compact modeling; iii-nitride RF devices; SiC MOS technology and lasers.
Keywords :
Ge-Si alloys; biosensors; electric sensing devices; laser beam applications; micromechanical devices; nanoelectronics; nonelectric sensing devices; optoelectronic devices; organic semiconductors; power semiconductor devices; semiconductor device models; silicon-on-insulator; submillimetre wave devices; wide band gap semiconductors; MEMS; MOS technology; Si-Ge devices; SiC power electronic devices; THz devices; advanced device characterization; advanced processing technologies; biosensors; compact modeling; device network applications; electronic devices; electronic materials; engineering education; extreme environments; flexible electronics; gate related effects; high frequency devices; iii-nitride RF devices; lasers; nanoelectronics; nanoscale device applications; optoelectronics; organic materials; organic semiconductor devices; photonics; semiconductor device structures; silicon-on-insulator; space application; statistical modeling; technology modeling; wide band-gap semiconductors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1891-6
Type :
conf
DOI :
10.1109/ISDRS.2007.4422227
Filename :
4422227
Link To Document :
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