Superior n-MOSFET performance by optimal stress design

In this article we present detailed stress simulation characterization of the 3-D boundary effects and show that the high-performance n FET can be achieved by the ultra-high-stress CESL stressor and optimal geometric structure design. A symmetric structure which results in the biaxial- like stress is favored for n FET in terms of I_on, B_sat r_sat, and v_nj. The comprehensive study helps the future device circuit design and remains valid for future technology node of 22 nm.