DocumentCode
2656203
Title
A comprehensive experimental study on technology options for reduced substrate coupling in RF and high-speed bipolar circuits
Author
Pfost, Martin ; Brenner, Pietro ; Huttner, Thomas ; Romanyuk, Andriy
Author_Institution
Infineon Technol. AG, Munich, Germany
fYear
2003
fDate
28-30 Sept. 2003
Firstpage
39
Lastpage
42
Abstract
The influence of substrate coupling on advanced high-speed and RF circuits can have a significant impact on circuit performance and must therefore be reduced. Hence, the circuit designer usually applies shielding measures such as guard rings. However, this might not be sufficient for high-performance circuits. Here, also the technology must be optimized to suppress substrate coupling as much as possible. In this work different technology options such as high-resistivity and SOI substrates, transistor isolation techniques, and shielding methods are investigated and their influence on substrate coupling is determined by measurements. In contrast to most previous work, this paper focuses on high-speed and RF circuits, fabricated in advanced bipolar or BiCMOS technologies.
Keywords
bipolar integrated circuits; circuit optimisation; electromagnetic coupling; electromagnetic shielding; high-speed integrated circuits; isolation technology; radiofrequency integrated circuits; silicon-on-insulator; BiCMOS technology; RF bipolar circuits; SOI substrates; bipolar technology; guard rings; high-resistivity; high-speed bipolar circuits; shielding methods; substrate coupling; transistor isolation; Bipolar integrated circuits; Circuit optimization; Electromagnetic shielding; Isolation technology; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
ISSN
1088-9299
Print_ISBN
0-7803-7800-8
Type
conf
DOI
10.1109/BIPOL.2003.1274931
Filename
1274931
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