Title :
Comparison between Ge and InGaAs APDs in the 1 to 2 μm wavelength range
Author :
Refaat, Tamer F. ; Abedin, M. Nurul ; Singh, Upendra N.
Author_Institution :
Sci. & Technol. Corp., NASA Langley Res. Center, Hampton, VA, USA
Abstract :
Ge and InGaAs avalanche photodiodes are suitable for lidar application at 1, 1.3 and 1.55 μm wavelengths. A comparison between the two devices is presented, which addresses quantum efficiency, responsivity, dark current, noise and detectivity.
Keywords :
avalanche photodiodes; gallium arsenide; indium compounds; measurement by laser beam; 1 to 2 micron; 1.3 micron; 1.55 micron; Ge; InGaAs; InGaAs APD; InGaAs avalanche photodiode; dark current; lidar application; quantum efficiency; Avalanche photodiodes; Current measurement; Dark current; Indium gallium arsenide; Infrared detectors; Laser radar; NASA; Semiconductor device noise; Temperature; Voltage;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN :
1-55752-796-2
DOI :
10.1109/QELS.2005.1549354
