DocumentCode
2656209
Title
Comparison between Ge and InGaAs APDs in the 1 to 2 μm wavelength range
Author
Refaat, Tamer F. ; Abedin, M. Nurul ; Singh, Upendra N.
Author_Institution
Sci. & Technol. Corp., NASA Langley Res. Center, Hampton, VA, USA
Volume
3
fYear
2005
fDate
22-27 May 2005
Firstpage
1997
Abstract
Ge and InGaAs avalanche photodiodes are suitable for lidar application at 1, 1.3 and 1.55 μm wavelengths. A comparison between the two devices is presented, which addresses quantum efficiency, responsivity, dark current, noise and detectivity.
Keywords
avalanche photodiodes; gallium arsenide; indium compounds; measurement by laser beam; 1 to 2 micron; 1.3 micron; 1.55 micron; Ge; InGaAs; InGaAs APD; InGaAs avalanche photodiode; dark current; lidar application; quantum efficiency; Avalanche photodiodes; Current measurement; Dark current; Indium gallium arsenide; Infrared detectors; Laser radar; NASA; Semiconductor device noise; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN
1-55752-796-2
Type
conf
DOI
10.1109/QELS.2005.1549354
Filename
1549354
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