DocumentCode :
2656214
Title :
A high performance unilateral 900 MHz LNA with simultaneous noise, impedance, and IP3 match
Author :
van der Heijden, M.P. ; de Vreede, L.C.N. ; van Straten, F. ; Burghartz, J.N.
Author_Institution :
Dept. of Microelectron., TU Delft, Netherlands
fYear :
2003
fDate :
28-30 Sept. 2003
Firstpage :
45
Lastpage :
48
Abstract :
This paper describes a novel current-feedback LNA design with Cbc-neutralization. The resulting unilateral amplifier stage is completed with out-of-band loading for improved linearity. The proposed design method provides simultaneous noise, impedance and IP3 matching for the active device; resulting in maximum gain, linearity, isolation, and stability even at very low current levels. As verification a 900 MHz hybrid Si BJT LNA is constructed, which achieves 1.3 dB NF, 15 dB gain, 55 dB isolation, and +10dBm IIP3 with 2.5mA of collector current at VCE = 1.5 V.
Keywords :
bipolar transistors; elemental semiconductors; feedback amplifiers; impedance matching; silicon; 1.5 V; 15 dB; 2.5 mA; 900 MHz; BJT LNA; Cbc-neutralization; IP3 matching; Si; active device; bipolar junction transistor; current-feedback LNA design; impedance matching; noise matching; out-of-band loading; unilateral LNA; unilateral amplifier stage; Bipolar transistors; Feedback amplifiers; Impedance matching; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
ISSN :
1088-9299
Print_ISBN :
0-7803-7800-8
Type :
conf
DOI :
10.1109/BIPOL.2003.1274932
Filename :
1274932
Link To Document :
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