Title :
New bi-directional T-shaped triple gate n-type poly-si TFT by a low-temperature SLS-process for reducing kink effects
Author :
Choi, Sung-Hwan ; Shin, Hee-Sun ; Han, Min-Koo
Author_Institution :
Seoul Nat. Univ., Seoul
Abstract :
In this paper, the authors have proposed and fabricated a new bi-directional T-shaped triple-gate structure for reduction of kink current in poly-Si TFTs fabricated by SLS crystallization method. The mobility of TFT parallel channel direction with laser crystallization direction is 169.87cm2/Vs and the mobility of TFT perpendicular channel direction with laser crystallization direction is 64.28cm2/Vs respectively. The different channel structure is used in the proposed device instead of using asymmetric gate channel length, and then the proposed bi-directional T-shaped Triple-gate structure could be fabricated by normal LTPS process without any limitation of device design rules.
Keywords :
crystallisation; laser materials processing; silicon; thin film transistors; LTPS process; SLS crystallization method; TFT parallel channel direction; TFT perpendicular channel direction; asymmetric gate channel length; bidirectional T-shaped triple gate TFT; bidirectional T-shaped triple-gate structure; channel structure; kink effects; laser crystallization direction; low-temperature SLS process; n-type poly-Si TFT; thin film transistors; Active matrix organic light emitting diodes; Bidirectional control; Crystallization; Degradation; Educational institutions; Laser sintering; Silicon; Switching circuits; Thin film transistors; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
DOI :
10.1109/ISDRS.2007.4422232
