• DocumentCode
    2656245
  • Title

    An 8.2-GHz, 14.4mW, 1.6dB NF SiGe bipolar LNA with DC current reuse

  • Author

    Gramegna, Giuseppe ; Magliarisi, Angelo ; Paparo, Mario

  • Author_Institution
    STMicroelectronics, Catania, Italy
  • fYear
    2003
  • fDate
    28-30 Sept. 2003
  • Firstpage
    49
  • Lastpage
    52
  • Abstract
    A balanced low noise amplifier (LNA) has been integrated in a 0.25μm BiCMOS technology. To reduce power consumption and improve performances, two stages that share the same DC current have been stacked. A Miller effect neutralization scheme avoids the need to cascode transistors. The LNA takes an area of 0.8 × 1.15 mm2 (bondwire pads excluded) and draws 14.4mW from a 1.8V supply voltage. In this conditions, measured parameters at 8.2-GHz are NF=1.6dB, power gain Gp=22-dB, output P1dB=3.3dBm at 8.2-GHz.
  • Keywords
    BiCMOS integrated circuits; amplifiers; bipolar integrated circuits; integrated circuit design; silicon compounds; 0.25 micron; 14.4 mW; 22 dB; 8.2 GHz; BiCMOS technology; DC current reuse; Miller effect neutralization; SiGe; bipolar LNA; low noise amplifier; power consumption; Amplifiers; BiCMOS integrated circuits; Bipolar integrated circuits; Integrated circuit design; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-7800-8
  • Type

    conf

  • DOI
    10.1109/BIPOL.2003.1274933
  • Filename
    1274933
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2656245