Title :
A BiCMOS SiGe low phase noise tunable 30 GHz RF source using a frequency tripler and a VCO
Author :
Coustou, A. ; Dubuc, D. ; Graffeuil, J. ; Tournier, E. ; Llopis, O. ; Boulanger, C. ; Plana, R. ; Legoascoze, V.
Author_Institution :
LAAS, CNRS, Toulouse, France
Abstract :
In this paper, we present a 10/30GHz tripler and an X band VCO, integrated on a single chip, using a 0.35μm, 60GHz-FMAX BiCMOS SiGe technology. These two circuits are used together in order to implement a low phase noise MMIC 30GHz source. The tripler exhibits a conversion gain in the -5dB range. The VCO exhibits a phase noise of -87dBc/Hz at a 100kHz frequency offset. The supply voltage of the chip is 7 volts and the total DC power consumption is in the range of 900mW. The circuit exhibits a surface area less than 1mm2 (probe pads area excluded).
Keywords :
BiCMOS integrated circuits; MIMIC; frequency multipliers; integrated circuit design; silicon compounds; voltage-controlled oscillators; 0.35 micron; 10 GHz; 100 kHz; 30 GHz; 60 GHz; 7 V; 900 mW; BiCMOS technology; DC power consumption; RF source; SiGe; X band VCO; conversion gain; frequency offset; frequency tripler; low phase noise MMIC; supply voltage; voltage controlled oscillator; BiCMOS integrated circuits; Frequency conversion; Integrated circuit design; MIMICs; Silicon compounds; Voltage controlled oscillators;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
Print_ISBN :
0-7803-7800-8
DOI :
10.1109/BIPOL.2003.1274934
