• DocumentCode
    2656286
  • Title

    A fully integrated 7-18 GHz power amplifier with on-chip output balun in 75 GHz-fT SiGe-bipolar

  • Author

    Bakalski, Winfried ; Vasylyev, Anclriy ; Simbürger, Werner ; Thüringer, Ronald ; Wohlmuth, H.-D. ; Scholtz, Arpad L. ; Eger, Peter U.

  • Author_Institution
    Infineon Technol. AG, Munich, Germany
  • fYear
    2003
  • fDate
    28-30 Sept. 2003
  • Firstpage
    61
  • Lastpage
    64
  • Abstract
    A fully integrated rf power amplifier for 7-18 GHz-fT with no external components was realized in a 75GHz-fT, 0.35μm-SiGe-BiCMOS technology. At 17.2GHz the push-pull amplifier with integrated output balun delivers 12dBm, 17.5 dBm at 1.2V, 2.4V.
  • Keywords
    BiCMOS analogue integrated circuits; baluns; integrated circuit design; power amplifiers; 0.35 micron; 1.2 V; 17.2 GHz; 2.4 V; 7 to 18 GHz; 75 GHz; BiCMOS technology; SiGe; integrated power amplifier; on-chip output balun; push-pull amplifier; rf power amplifier; Baluns; BiCMOS analog integrated circuits; Integrated circuit design; Power amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-7800-8
  • Type

    conf

  • DOI
    10.1109/BIPOL.2003.1274936
  • Filename
    1274936
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2656286