DocumentCode :
2656286
Title :
A fully integrated 7-18 GHz power amplifier with on-chip output balun in 75 GHz-fT SiGe-bipolar
Author :
Bakalski, Winfried ; Vasylyev, Anclriy ; Simbürger, Werner ; Thüringer, Ronald ; Wohlmuth, H.-D. ; Scholtz, Arpad L. ; Eger, Peter U.
Author_Institution :
Infineon Technol. AG, Munich, Germany
fYear :
2003
fDate :
28-30 Sept. 2003
Firstpage :
61
Lastpage :
64
Abstract :
A fully integrated rf power amplifier for 7-18 GHz-fT with no external components was realized in a 75GHz-fT, 0.35μm-SiGe-BiCMOS technology. At 17.2GHz the push-pull amplifier with integrated output balun delivers 12dBm, 17.5 dBm at 1.2V, 2.4V.
Keywords :
BiCMOS analogue integrated circuits; baluns; integrated circuit design; power amplifiers; 0.35 micron; 1.2 V; 17.2 GHz; 2.4 V; 7 to 18 GHz; 75 GHz; BiCMOS technology; SiGe; integrated power amplifier; on-chip output balun; push-pull amplifier; rf power amplifier; Baluns; BiCMOS analog integrated circuits; Integrated circuit design; Power amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
ISSN :
1088-9299
Print_ISBN :
0-7803-7800-8
Type :
conf
DOI :
10.1109/BIPOL.2003.1274936
Filename :
1274936
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2656286
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